An MHD Modeling of High-Temperature SiC Solution GrowthF. Mercier, D. Chaussende, J.M. Dedulle[1,2] and J. Lefebure
Laboratoire des Matériaux et du Génie Physique (LMGP), Grenoble INP - CNRS, France
IRIS Technologies, Grenoble, France
Despite its real advantages compare to seeded sublimation growth, SiC solution growth has never given convincing results. The difficulty of stabilizing the growth front, and thus avoiding any polycrystal formation results from a poor description and understanding of the coupled phenomena that occur in the crucible. This paper addresses the coupled electromagnetism, heat transfer and fluid dynamic modeling of the SiC solution growth process, with special attention being paid to the different convective flows in the liquid. The present paper gives a methodology to create an induction heating modeling with COMSOL Multiphysics and highlight some improvements with the new version v4.0 rather the previous one (v3.5).