Molecular Flow in an Ion-Implant Vacuum System
Application ID: 10011
This example shows how to model an ion implantation system using the Molecular Flow interface available in the Molecular Flow Module. In ion implantation, outgassing molecules interact with the ion beam to produce undesirable species. The average number density of outgassing molecules along the beam path is used as a figure of merit to evaluate the design. Furthermore, the angle of the wafer relative to the beam can be modified. The figure of merit must be computed as a function of wafer angle, with rotation about one axis.